, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 RFP8N20L 8a, 200v, 0.600 ohm, logic level, n-channel power mosfet this n-channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5v) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. this performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3v to 5v range, thereby facilitating true on-off power control directly from logic circuit supply voltages. ordering information part number RFP8N20L package to-220ab brand RFP8N20L note: when ordering, include the entire part number. features ? 8a,200v ? rds(0n) = o.eoon ? design optimized for 5v gate drives ? can be driven directly from qmos, nmos, ttl circuits ? compatible with automotive drive requirements ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedence ? majority carrier device symbol d o packaging jedec to-220ab drain (flange) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
RFP8N20L absolute maximum ratings tc = 25c, unless otherwise specified drain to source voltage (note 1 ) . vno drain to gate voltage (rqs = 20kq) (note 1 ) continuous drain current pulsed drain current (note 3) gate to source voltage maximum power dissipation above tc = 25c, derate linearly operating and storage temperature maximum temperature for soldering leads at 0 063in (1 6mm) from case for 10s package body for 10s see techbrief 334 vnrr ... |n pn ti caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. tj = 25cto 125c. RFP8N20L units 200 v 200 v 8 a 20 a 10 v 60 w 0.48 w/c -55 to 150 c 300 c 260 c a stress only rating and operation of the electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate to threshold voltage zero gate voltage drain current gate to source leakage current drain to source on-voltage (note 2) drain to source on resistance (note 2) turn on delay time rise time turn off delay time fall time input capacitance output capacitance reverse transfer capacitance thermal resistance junction to case symbol bvdss vgs(th) toss 'gss vds(on) rds(on) 'd(on) v ld(off) tf ciss coss crss r9jc test conditions id = 250|ia, vgs = 0 vgs = vds, 'd = 250|ia vds = 0-8 x rated bvdss vds = -8 x rated bvdss tc = 25c tc = 125c vgs= 10v, vqs = o id = 8a, vgs = 5v id = 4a, vgs = 5v id = 4a, vdd = 50v, rg = 6.25 , vgs = 5v vgs = v, vds = 25v, f = 1 mhz RFP8N20L min 200 1 - - - - - - - - - - - - 1 typ - - - - - - - 15 45 100 60 - - - max - 2 1 50 100 4.8 0.600 45 150 135 105 900 250 120 2.083 units v v ha jia na v n ns ns ns ns pf pf pf c/w source to drain diode specifications parameter source to drain diode voltage (note 2) diode reverse recovery time symbol vsd trr test conditions isd = 4a isd = 4a, dlsd/dt = 100a/hs min - - typ - 250 max 1.4 - units v ns notes: 2. pulsed: pulse duration = 300ns max, duty cycle = 2%. 3. repetitive rating: pulse width limited by maximum junction temperature.
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